Gengchiau Liang,: search on Z-Library

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1

Computational study of double-gate graphene nano-ribbon transistors

Gengchiau Liang, Neophytos Neophytou, Mark S. Lundstrom, Dmitri E. Nikonov

Journal:

Journal of Computational Electronics

Year:

2008

Language:

english

File:

PDF, 363 KB

english, 2008

2

Theoretical study on thermoelectric properties of kinked graphene nanoribbons

Huang, Wen, Wang, Jian-Sheng, Liang, Gengchiau

Journal:

Physical Review B

Year:

2011

Language:

english

File:

PDF, 766 KB

english, 2011

3

Ultrafast and energy-efficient spin–orbit torque switching in compensated ferrimagnets

Cai, Kaiming, Zhu, Zhifeng, Lee, Jong Min, Mishra, Rahul, Ren, Lizhu, Pollard, Shawn D., He, Pan, Liang, Gengchiau, Teo, Kie Leong, Yang, Hyunsoo

Journal:

Nature Electronics

Year:

2020

Language:

english

File:

PDF, 1.80 MB

english, 2020

4

A statistical Seebeck coefficient model based on percolation theory in two-dimensional disordered systems

Wang, Lingfei, Thean, Aaron Voon-Yew, Liang, Gengchiau

Journal:

Journal of Applied Physics

Year:

2019

Language:

english

File:

PDF, 1.83 MB

english, 2019

5

All-electric magnetization switching and Dzyaloshinskii–Moriya interaction in WTe2/ferromagnet heterostructures

Shi, Shuyuan, Liang, Shiheng, Zhu, Zhifeng, Cai, Kaiming, Pollard, Shawn D., Wang, Yi, Wang, Junyong, Wang, Qisheng, He, Pan, Yu, Jiawei, Eda, Goki, Liang, Gengchiau, Yang, Hyunsoo

Journal:

Nature Nanotechnology

Year:

2019

Language:

english

File:

PDF, 1.94 MB

english, 2019

6

[IEEE 2018 International Symposium on VLSI Technology, Systems and Application (VLSI-TSA) - Hsinchu, Taiwan (2018.4.16-2018.4.19)] 2018 International Symposium on VLSI Technology, Systems and Application (VLSI-TSA) - Device physics, design and challenge of negative capacitance FET

Liang, Gengchiau

Year:

2018

Language:

english

File:

PDF, 43 KB

english, 2018

7

Analysis on Performance of Ferroelectric NC-FETs Based on Real-Space Gibbs-Free Energy With Atomic Channel Structure

Zhang, Xiaoyi, Gong, Xiao, Liang, Gengchiau

Journal:

IEEE Transactions on Electron Devices

Year:

2019

Language:

english

File:

PDF, 2.00 MB

english, 2019

8

Spin-wave mediated interactions for majority computation using Skyrmions and spin-torque nano-oscillators

Miriyala, Venkata Pavan Kumar, Zhu, Zhifeng, Liang, Gengchiau, Fong, Xuanyao

Journal:

Journal of Magnetism and Magnetic Materials

Year:

2019

Language:

english

File:

PDF, 2.55 MB

english, 2019

9

Germanium-Tin on Si Avalanche Photodiode: Device Design and Technology Demonstration

Yuan Dong,, Wei Wang,, Xin Xu,, Xiao Gong,, Dian Lei,, Qian Zhou,, Zhe Xu,, Wan Khai Loke,, Soon-Fatt Yoon,, Gengchiau Liang,, Yee-Chia Yeo,

Journal:

IEEE Transactions on Electron Devices

Year:

2015

Language:

english

File:

PDF, 2.71 MB

english, 2015

10

A pseudopotential method for investigating the surface roughness effect in ultrathin body transistors

Zhu, Zhen-Gang, Liang, Gengchiau, Li, Ming-Fu, Samudra, Ganesh

Journal:

Journal of Physics Condensed Matter

Year:

2008

Language:

english

File:

PDF, 379 KB

english, 2008

11

[IEEE Electrical Performance of Electronic Packaging - Austin, TX (2004.10.27-2004.10.27)] Electrical Performance of Electronic Packaging IWCE-04 - Hybrid-basis modeling of electron transport through molecules on silicon

Gengchiau Liang,, Ghosh,, Rakshit,, Datta,

Year:

2004

Language:

english

File:

PDF, 131 KB

english, 2004

12

Ultra-low specific contact resistivity (1.4 × 10 −9 Ω·cm 2 ) for metal contacts on in-situ Ga-doped Ge 0.95 Sn 0.05 film

Wu, Ying, Luo, Sheng, Wang, Wei, Masudy-Panah, Saeid, Lei, Dian, Liang, Gengchiau, Gong, Xiao, Yeo, Yee-Chia

Journal:

Journal of Applied Physics

Year:

2017

Language:

english

File:

PDF, 2.31 MB

english, 2017

13

Sub-100 Nanometer Channel Length Ge/Si Nanowire Transistors with Potential for 2 THz Switching Speed

Hu, Yongjie, Xiang, Jie, Liang, Gengchiau, Yan, Hao, Lieber, Charles M.

Journal:

Year:

2008

Language:

english

File:

PDF, 1.33 MB

english, 2008

14

Effects of Contact Placement and Intra/Interlayer Interaction in Current Distribution of Black Phosphorus Sub-10-nm FET

Luo, Sheng, Lam, Kai-Tak, Wang, Baokai, Hsu, Chuang-Han, Huang, Wen, Yao, Liang-Zi, Bansil, Arun, Lin, Hsin, Liang, Gengchiau

Journal:

IEEE Transactions on Electron Devices

Year:

2017

Language:

english

File:

PDF, 1.94 MB

english, 2017

15

Monolithic integration of InGaAs n-FETs and lasers on Ge substrate

Kumar, Annie, Lee, Shuh-Ying, Yadav, Sachin, Tan, Kian Hua, Loke, Wan Khai, Wicaksono, Satrio, Li, Daosheng, Panah, Saeid Masudy, Liang, Gengchiau, Yoon, Soon-Fatt, Gong, Xiao, Antoniadis, Dimitri, Ye

Journal:

Year:

2017

Language:

english

File:

PDF, 3.13 MB

english, 2017

16

Geometry effects on thermoelectric properties of silicon nanowires based on electronic band structures

Liang, Gengchiau, Huang, Wen, Koong, Chee Shin, Wang, Jian-Sheng, Lan, Jinghua

Journal:

Journal of Applied Physics

Year:

2010

Language:

english

File:

PDF, 776 KB

english, 2010

17

Growth and characterization of highly tensile strained Ge 1−x Sn x formed on relaxed In y Ga 1−y P buffer layers

Wang, Wei, Loke, Wan Khai, Yin, Tingting, Zhang, Zheng, D'Costa, Vijay Richard, Dong, Yuan, Liang, Gengchiau, Pan, Jisheng, Shen, Zexiang, Yoon, Soon Fatt, Tok, Eng Soon, Yeo, Yee-Chia

Journal:

Journal of Applied Physics

Year:

2016

Language:

english

File:

PDF, 2.41 MB

english, 2016

18

Field-Free Switching of Perpendicular Magnetization Through Spin Hall and Anomalous Hall Effects in Ferromagnet–Heavy-Metal–Ferromagnet Structures

Sun, Chi, Deng, Jiefang, Rafi-Ul-Islam, S. M., Liang, Gengchiau, Yang, Hyunsoo, Jalil, Mansoor B. A.

Journal:

Physical Review Applied

Year:

2019

File:

PDF, 2.13 MB

2019

19

Role of carrier-transfer in the optical nonlinearity of graphene/Bi 2 Te 3 heterojunctions

Lan, Jia-Chi, Qiao, Junpeng, Sung, Wei-Heng, Chen, Chun-Hu, Jhang, Ren-Huai, Lin, Shi-Hsin, Ng, Li-Ren, Liang, Gengchiau, Wu, Meng-Yu, Tu, Li-Wei, Cheng, Cheng-Maw, Liu, Hong, Lee, Chao-Kuei

Journal:

Year:

2020

File:

PDF, 3.16 MB

2020

20

[IEEE 2008 2nd IEEE International Nanoelectronics Conference - Shanghai, China (2008.03.24-2008.03.27)] 2008 2nd IEEE International Nanoelectronics Conference - A first-principles study on edge doping of armchair graphene nanoribbon

Kai Tak Lam,, Gengchiau Liang,

Year:

2008

File:

PDF, 185 KB

2008

21

[IEEE 2016 IEEE Silicon Nanoelectronics Workshop (SNW) - Honolulu, HI, USA (2016.6.12-2016.6.13)] 2016 IEEE Silicon Nanoelectronics Workshop (SNW) - Performance evaluation of nanoscale FETs based on full-band complex bandstructure and real space poisson solver

Zhang, Xiaoyi, Yeo, Yee-Chia, Liang, Gengchiau

Year:

2016

Language:

english

File:

PDF, 961 KB

english, 2016

22

Ge 0.83 Sn 0.17 p-channel metal-oxide-semiconductor field-effect transistors: Impact of sulfur passivation on gate stack quality

Lei, Dian, Wang, Wei, Zhang, Zheng, Pan, Jisheng, Gong, Xiao, Liang, Gengchiau, Tok, Eng-Soon, Yeo, Yee-Chia

Journal:

Journal of Applied Physics

Year:

2016

Language:

english

File:

PDF, 2.84 MB

english, 2016

23

Voltage-input spintronic oscillator based on competing effect for extended oscillation regions

Zhu, Zhifeng, Deng, Jiefang, Fong, Xuanyao, Liang, Gengchiau

Journal:

Journal of Applied Physics

Year:

2019

Language:

english

File:

PDF, 2.36 MB

english, 2019

24

[IEEE 2020 IEEE Silicon Nanoelectronics Workshop (SNW) - Honolulu, HI, USA (2020.6.13-2020.6.14)] 2020 IEEE Silicon Nanoelectronics Workshop (SNW) - A Computational Performance Evaluation of Negative-Capacitance MOSFETs based on Ultra-thin body Silicon and Monolayer MoS 2

Luo, Sheng, Zhang, Xiaoyi, Liang, Gengchiau

Year:

2020

File:

PDF, 1.36 MB

2020

25

[IEEE 2011 IEEE 4th International Nanoelectronics Conference (INEC) - Tao-Yuan, Taiwan (2011.06.21-2011.06.24)] The 4th IEEE International NanoElectronics Conference - Performance comparison of armchair-edged and nitrogen-doped zigzag-edged graphene nanoribbon schottky barrier field-effect transistors

Lam, Kai-Tak, Peck, Yan-Zheng, Lim, Zhi-Hean, Liang, Gengchiau

Year:

2011

Language:

english

File:

PDF, 575 KB

english, 2011

26

Etching of germanium-tin using ammonia peroxide mixture

Dong, Yuan, Ong, Bin Leong, Wang, Wei, Zhang, Zheng, Pan, Jisheng, Gong, Xiao, Tok, Eng-Soon, Liang, Gengchiau, Yeo, Yee-Chia

Journal:

Journal of Applied Physics

Year:

2015

Language:

english

File:

PDF, 2.11 MB

english, 2015

27

A Physics-Based Compact Model for Transition-metal Dichalcogenides Transistors with the Band-Tail Effect

Wang, Lingfei, Li, Yang, Gong, Xiao, Thean, Aaron Voon-Yew, Liang, Gengchiau

Journal:

IEEE Electron Device Letters

Year:

2018

Language:

english

File:

PDF, 764 KB

english, 2018

28

Guest Editorial Special Issue on 2-D Materials for Electronic, Optoelectronic, and Sensor Devices

Yoon, Youngki, Das, Saptarshi, Esseni, David, De Vittorio, David, Bhat, Navakanta, Muneta, Iriya, Liang, Gengchiau, Schwierz, Frank, Moshkalev, Stanislav A.

Journal:

IEEE Transactions on Electron Devices

Year:

2018

Language:

english

File:

PDF, 4.14 MB

english, 2018

29

Device Physics and Characteristics of Graphene Nanoribbon Tunneling FETs

Sai-Kong Chin, Dawei Seah, Kai-Tak Lam, Samudra, G.S., Gengchiau Liang

Journal:

IEEE Transactions on Electron Devices

Year:

2010

Language:

english

File:

PDF, 1.11 MB

english, 2010

30

Enhanced Faraday rotation in magnetophotonic crystal infiltrated with graphene

Da, Haixia, Liang, Gengchiau

Journal:

Applied Physics Letters

Year:

2011

Language:

english

File:

PDF, 761 KB

english, 2011

31

[IEEE 2011 IEEE 4th International Nanoelectronics Conference (INEC) - Tao-Yuan, Taiwan (2011.06.21-2011.06.24)] The 4th IEEE International NanoElectronics Conference - Source/drain doping influence on heterojunction graphene nanoribbon tunneling field effect transistors

Da, Haixia, Lam, Kai-Tak, Samudra, Ganesh S., Liang, Gengchiau, Chin, Sai-Kong

Year:

2011

Language:

english

File:

PDF, 769 KB

english, 2011

32

[OSA Optical Fiber Communication Conference - Los Angeles, California (2015..-..)] Optical Fiber Communication Conference - Germanium-tin on Silicon p-i-n Photodiode with Low Dark Current due to Sidewall Surface Passivation

Dong, Yuan, Wang, Wei, Lei, Dian, Gong, Xiao, Zhou, Qian, Lee, Shuh Ying, Loke, Wan Khai, Yoon, Soon-Fatt, Liang, Gengchiau, Yeo, Yee-Chia

Year:

2015

Language:

english

File:

PDF, 118 KB

english, 2015

33

[IEEE 2016 IEEE Symposium on VLSI Technology - Honolulu, HI, USA (2016.6.14-2016.6.16)] 2016 IEEE Symposium on VLSI Technology - Germanium-Tin heterojunction phototransistor: Towards high-efficiency low-power photodetection in short-wave infrared range

Wang, Wei, Dong, Yuan, Lee, Shuh Ying, Loke, Wan Khai, Gong, Xiao, Yoon, Soon-Fatt, Liang, Gengchiau, Yeo, Yee-Chia

Year:

2016

Language:

english

File:

PDF, 939 KB

english, 2016

34

Erratum: “Voltage-input spintronic oscillator based on competing effect for extended oscillation regions” [J. Appl. Phys. 125, 183902 (2019)]

Zhu, Zhifeng, Deng, Jiefang, Fong, Xuanyao, Liang, Gengchiau

Journal:

Journal of Applied Physics

Year:

2019

File:

PDF, 559 KB

2019

35

Graphene Nanoribbon Tunneling Field-Effect Transistors With a Semiconducting and a Semimetallic Heterojunction Channel

Haixia Da, Kai-Tak Lam, Samudra, G., Sai-Kong Chin, Gengchiau Liang

Journal:

IEEE Transactions on Electron Devices

Year:

2012

Language:

english

File:

PDF, 761 KB

english, 2012

36

Torque engineering in trilayer spin-hall system

Gupta, Gaurav, Jalil, Mansoor Bin Abdul, Liang, Gengchiau

Journal:

Journal of Physics D Applied Physics

Year:

2016

Language:

english

File:

PDF, 2.74 MB

english, 2016

37

Gate-All-Around In0.53Ga0.47As Junctionless Nanowire FET With Tapered Source/Drain Structure

Goh, Kian-Hui, Yadav, Sachin, Low, Kain Lu, Liang, Gengchiau, Gong, Xiao, Yeo, Yee-Chia

Journal:

IEEE Transactions on Electron Devices

Year:

2016

Language:

english

File:

PDF, 2.84 MB

english, 2016

38

[IEEE 2017 IEEE Electron Devices Technology and Manufacturing Conference (EDTM) - Toyama, Japan (2017.2.28-2017.3.2)] 2017 IEEE Electron Devices Technology and Manufacturing Conference (EDTM) - A computational study of fundamentals and design considerations for vertical tunneling field-effect transistor

Luo, Sheng, Low, Kain Lu, Zhang, Xiaoyi, Zhao, Qianyu, Lin, Hsin, Liang, Gengchiau

Year:

2017

Language:

english

File:

PDF, 921 KB

english, 2017

39

Performance Evaluation and Device Physics Investigation of Negative-Capacitance MOSFETs Based on Ultrathin Body Silicon and Monolayer MoSâ

Luo, Sheng, Zhang, Xiaoyi, Liang, Gengchiau

Journal:

IEEE Transactions on Electron Devices

Year:

2020

File:

PDF, 1.95 MB

2020

40

[IEEE 2013 IEEE International Electron Devices Meeting (IEDM) - Washington, DC, USA (2013.12.9-2013.12.11)] 2013 IEEE International Electron Devices Meeting - Is sub-10nm thick 3D-topological insulator good for the local electrical interconnects?

Gupta, Gaurav, Jalil, Mansoor Bin Abdul, Liang, Gengchiau

Year:

2013

Language:

english

File:

PDF, 675 KB

english, 2013

41

[IEEE 2017 IEEE International Electron Devices Meeting (IEDM) - San Francisco, CA, USA (2017.12.2-2017.12.6)] 2017 IEEE International Electron Devices Meeting (IEDM) - A unified surface potential based physical compact model for both unipolar and ambipolar 2D-FET: Experimental verification and circuit demonstration

Wang, Lingfei, Li, Yang, Feng, Xuewei, Ang, Kah-Wee, Gong, Xiao, Thean, Aaron, Liang, Gengchiau

Year:

2017

Language:

english

File:

PDF, 826 KB

english, 2017

42

The effects of interlayer mismatch on electronic properties of bilayer armchair graphene nanoribbons

You Qian, Kai-Tak Lam, Chengkuo Lee, Gengchiau Liang

Journal:

Year:

2012

Language:

english

File:

PDF, 1.34 MB

english, 2012

43

Graphene-based Spin Caloritronics

Zeng, Minggang, Feng, Yuanping, Liang, Gengchiau

Journal:

Year:

2011

Language:

english

File:

PDF, 1.97 MB

english, 2011

44

Shape effects in graphene nanoribbon resonant tunneling diodes: A computational study

Teong, Hansen, Lam, Kai-Tak, Khalid, Sharjeel Bin, Liang, Gengchiau

Journal:

Journal of Applied Physics

Year:

2009

Language:

english

File:

PDF, 1.15 MB

english, 2009

45

Bilayer graphene nanoribbon nanoelectromechanical system device: A computational study

Lam, Kai-Tak, Lee, Chengkuo, Liang, Gengchiau

Journal:

Applied Physics Letters

Year:

2009

Language:

english

File:

PDF, 515 KB

english, 2009

46

Disorder enhances thermoelectric figure of merit in armchair graphane nanoribbons

Ni, Xiaoxi, Liang, Gengchiau, Wang, Jian-Sheng, Li, Baowen

Journal:

Applied Physics Letters

Year:

2009

Language:

english

File:

PDF, 376 KB

english, 2009

47

[IEEE 2010 10th IEEE International Conference on Solid-State and Integrated Circuit Technology (ICSICT) - Shanghai, China (2010.11.1-2010.11.4)] 2010 10th IEEE International Conference on Solid-State and Integrated Circuit Technology - Theoretical study on geometry and temperature effects of thermoelectric properties of Si and Ge nanowires

Huang, Wen, Koong, Chee Shin, Liang, Gengchiau

Year:

2010

Language:

english

File:

PDF, 733 KB

english, 2010

48

Damping-like spin-orbit-torque-induced magnetization dynamics in ferrimagnets based on Landau-Lifshitz-Bloch equation

Zhu, Zhifeng, Fong, Xuanyao, Liang, Gengchiau

Journal:

Journal of Applied Physics

Year:

2018

Language:

english

File:

PDF, 2.00 MB

english, 2018

49

A Simulation Study of Graphene-Nanoribbon Tunneling FET With Heterojunction Channel

Kai-Tak Lam,, Dawei Seah,, Sai-Kong Chin,, Bala Kumar, S, Samudra, G, Yee-Chia Yeo,, Gengchiau Liang,

Journal:

IEEE Electron Device Letters

Year:

2010

Language:

english

File:

PDF, 277 KB

english, 2010

50

[IEEE 13th International Workshop on Computational Electronics (IWCE) - Beijing, China (2009.05.27-2009.05.29)] 2009 13th International Workshop on Computational Electronics - Device Performance of Graphene Nanoribbon Field Effect Transistors with Edge Roughness Effects: A Computational Study

Leong, Zuan-Yi, Lam, Kai-Tak, Liang, Gengchiau

Year:

2009

Language:

english

File:

PDF, 607 KB

english, 2009

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